PART |
Description |
Maker |
KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2 SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
HY27SS08561M HY27US08561M |
NAND Flash - 256Mb
|
Hynix Semiconductor
|
EDL5132CBMA-10-E EDL5132CBMA |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
EM48AM1684VBB-75F EM48AM1684VBB-75FE EM482M1684VBB |
256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM 256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation http://
|
MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BT-7 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3) DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR266A (2-3-3) DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2)
|
Infineon
|
K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 512Mb/256Mb 1.8V NAND Flash Errata 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
EBR25EC8ABKD-8C EBR25EC8ABKD-AD EBR25EC8ABKD-AE EB |
256MB 32-bit Direct Rambus DRAM RIMM?/a> Module 256MB 32-bit Direct Rambus DRAM RIMM Module 256MB 32-bit Direct Rambus DRAM RIMM垄芒 Module
|
Elpida Memory
|
HY5V58BLF-H HY5V58BLF-S |
SDRAM - 256Mb
|
Hynix Semiconductor
|